Shaoyun Wang
← All notes
Mechanics · 2024-10-13

Beams with Circuits

PDF

1 Beam with connecting circuit

The constitutive law is

[DS]=[eTddtsE][ET]\left[\begin{array}{l} \mathbf{D} \\ \mathbf{S} \end{array}\right]=\left[\begin{array}{ll} \mathbf{e}^T & \mathbf{d} \\ \mathbf{d}_t & \mathbf{s}^E \end{array}\right]\left[\begin{array}{l} \mathbf{E} \\ \mathbf{T} \end{array}\right]

Assume the field in the piezo patch is uniform, we have the relation after Laplace transform

V(s)=L⋅E(s),I(s)=sA⋅D(s)\mathbf{V}(s)=\mathbf{L} \cdot \mathbf{E}(s), \quad \mathbf{I}(s)=s \mathbf{A} \cdot \mathbf{D}(s)

Then the constitutive law can be transformed as

[IS]=[sAεTL−1sAddtL−1sE][VT]\left[\begin{array}{l} \mathbf{I} \\ \mathbf{S} \end{array}\right]=\left[\begin{array}{cc} s \mathbf{A} \varepsilon^T \mathbf{L}^{-1} & s\mathrm{\boldsymbol{Ad}} \\ \mathbf{d}_t \mathbf{L}^{-1} & \mathbf{s}^{\mathrm{E}} \end{array}\right]\left[\begin{array}{l} \mathbf{V} \\ \mathbf{T} \end{array}\right]

We define the capacity of piezo patch as

AiεiT/Li=CpiTA_i \varepsilon_i^T / L_i=C_{p i}^T

Then Eq. (3) can be rewritten as

[IS]=[sCpTsAddtL−1sE][VT]=[YD(s)sAddtL−1sE][VT],\left[\begin{array}{c} \mathbf{I} \\ \mathbf{S} \end{array}\right]=\left[\begin{array}{cc} s \mathbf{C}_p^T & s \mathbf{A d} \\ \mathbf{d}_t \mathbf{L}^{-1} & \mathbf{s}^E \end{array}\right]\left[\begin{array}{l} \mathbf{V} \\ \mathbf{T} \end{array}\right]=\left[\begin{array}{cc} \mathbf{Y}^D(s) & s \mathbf{A d} \\ \mathbf{d}_t \mathbf{L}^{-1} & \mathbf{s}^E \end{array}\right]\left[\begin{array}{l} \mathbf{V} \\ \mathbf{T} \end{array}\right],

where YD(s)\mathbf{Y}^D(s) is the open circuit admittance of the piezoelectric patch.

For shunted piezoelectric applications,

[IS]=[YELsAddtL−1SE][VT] where YEL=YD+YSU\left[\begin{array}{l} \mathbf{I} \\ \mathbf{S} \end{array}\right]=\left[\begin{array}{cc} \mathbf{Y}^{E L} & s \mathbf{A d} \\ \mathbf{d}_{\mathbf{t}} \mathbf{L}^{-1} & \mathbf{S}^E \end{array}\right]\left[\begin{array}{l} \mathbf{V} \\ \mathbf{T} \end{array}\right] \text { where } \quad \mathbf{Y}^{E L}=\mathbf{Y}^D+\mathbf{Y}^{S U}

The first equation gives

V=(ZEL)I−(ZELsAd)T\mathbf{V}=\left(\mathbf{Z}^{E L}\right) \mathbf{I}-\left(\mathbf{Z}^{E L} s \mathbf{A d}\right) \mathbf{T}

and inserting into second equation gives

S=[sE−dtL−1ZELsAd]T+[dtL−1ZEL]I.\mathbf{S}=\left[\mathbf{s}^E-\mathbf{d}_t \mathbf{L}^{-1} \mathbf{Z}^{E L} s \mathbf{A d}\right] \mathbf{T}+\left[\mathbf{d}_t \mathbf{L}^{-1} \mathbf{Z}^{E L}\right] \mathbf{I} .

The mechanical compliance is

sSU=[sE−dtL−1ZELsAd].\mathbf{s}^{S U}=\left[\mathbf{s}^E-\mathbf{d}_t \mathbf{L}^{-1} \mathbf{Z}^{E L} \boldsymbol{s A d}\right] .

Upon noting that with constant stress

ZE( s)=0= short circuit electrical impedance, ZD(s)=(CpTs)−1= open circuit electrical impedance, \begin{gathered} \mathbf{Z}^E(\mathrm{~s})=\mathbf{0}=\text { short circuit electrical impedance, } \\ \mathbf{Z}^D(s)=\left(\mathbf{C}_p^T s\right)^{-1}=\text { open circuit electrical impedance, } \end{gathered}

and that

sL−1εTA=CpTs,s \mathbf{L}^{-1} \boldsymbol{\varepsilon}^T \mathbf{A}=\mathbf{C}_p^T s,

equation (16) can be put in the form

sSU=[sE−dtZ‾EL(εT)−1d],\mathbf{s}^{S U}=\left[\mathbf{s}^E-\mathbf{d}_{\mathbf{t}} \overline{\mathbf{Z}}^{E L}\left(\boldsymbol{\varepsilon}^T\right)^{-1} \mathbf{d}\right],

where the matrix of non-dimensional electrical impedances is defined as

Z‾EL=ZEL(ZD)−1=(sCpT+YSU)−1sCpT\overline{\mathbf{Z}}^{E L}=\mathbf{Z}^{E L}\left(\mathbf{Z}^D\right)^{-1}=\left(s \mathbf{C}_p^T+\mathbf{Y}^{S U}\right)^{-1} s \mathbf{C}_p^T

Here, we introduce the electromechanical coupling coefficients

 shear, k15=d15/s55Eε1T=k24, transverse, k31=d31/s11Eε3T=k32, longitudinal, k33=d33/s33Eε3T,\begin{gathered} \text { shear, } k_{15}=d_{15} / \sqrt{s_{55}^E \varepsilon_1^T}=k_{24}, \quad \text { transverse, } k_{31}=d_{31} / \sqrt{s_{11}^E \varepsilon_3^T}=k_{32}, \\ \text { longitudinal, } k_{33}=d_{33} / \sqrt{s_{33}^E \varepsilon_3^T}, \end{gathered}

or, in the notation used, for force in the jj th direction and field in the ii th direction

kij=dij/sjjEεiT. k_{i j}=d_{i j} / \sqrt{s_{j j}^E \varepsilon_i^T} \text {. }

Substituting equation (25) into (23) gives

sjiSU=sjjE[1−kij2ZˉiEL].s_{j i}^{S U}=s_{j j}^E\left[1-k_{i j}^2 \bar{Z}_i^{E L}\right] .

1.1 Shunted with negative capacity

For our problem, the electric field is along zz direction and stress is along xx direction. So we have

s33SU=s33E[1−k312Zˉ1EL]=s33E[1−sCpTk312sCpT+YSU]=s33E[sCpT(1−k312)+YSUsCpT+YSU]s_{33}^{S U} = s_{33}^E\left[1-k_{31}^2 \bar{Z}_1^{E L}\right] = s_{33}^E\left[1- \frac{ s C_p^T k_{31}^2}{s C_p^T+Y^{S U}}\right] = s_{33}^E \left[\frac{ s C_p^T (1-k_{31}^2)+Y^{SU}}{s C_p^T+Y^{S U}}\right]

Then we have

EpSU(ω)=EpEiωCpT+YSUiωCpT(1−k312)+YSUE_{\mathrm{p}}^{\mathrm{SU}}(\omega)=E_{\mathrm{p}}^E \frac{\mathrm{i} \omega C_{\mathrm{p}}^T+Y^{\mathrm{SU}}}{\mathrm{i} \omega C_{\mathrm{p}}^T\left(1-k_{31}^2\right)+Y^{\mathrm{SU}}}

where s=iωs=i\omega.

If shunted with a negative capacity, we have

YSU=−iωC′=−iωHC0Y^{SU} = -i\omega C'=-i\omega H C_0

So the shunting Young’s modulus is (see reference [1])

EpSU(ω)=EpEC′−CpTC′−CpT(1−k312)E_{\mathrm{p}}^{\mathrm{SU}}(\omega)=E_{\mathrm{p}}^E \frac{C' - C_{\mathrm{p}}^T}{C' - C_{\mathrm{p}}^T\left(1-k_{31}^2\right)}

or

EpSU(ω)=EpEC′−CpTC′−CpSE_{\mathrm{p}}^{\mathrm{SU}}(\omega)=E_{\mathrm{p}}^E \frac{C' - C_{\mathrm{p}}^T}{C' - C_{\mathrm{p}}^S}

where CpS=(1−k312)CpT, CpT=Aε33T/dC_p^S = (1-k_{31}^2)C_p^T, \ C_{p}^T = A \varepsilon_{33}^T / d, which is the result from reference [3,4].

Finally,

Eeq=EbIb+2EpSUIpIb+2IpIb=bH312,Ip=bhp312+bhp(H2+hp2)2\begin{aligned} &E_{e q}=\frac{E_b I_b+2 E_p^{S U} I_p}{I_b+2 I_p}\\ &I_b=\frac{b H^3}{12}, \quad I_p=\frac{b h_p^3}{12}+b h_p\left(\frac{H}{2}+\frac{h_p}{2}\right)^2 \end{aligned}

1.2 Shunting circuit

Circuit diagram

The impedance is derived in the following picture.

Derivation of impedance

Now we have

Z2=1jωC+1/R0,Z3=R1,Z4=R2Z_2 = \frac{1}{j\omega C + 1/R_0}, \quad Z_3 = R_1, \quad Z_4 = R_2

Then we have impedance

Zin=−R1R2(jωC+1/R0)=1jωCNZ_{\text{in}} =- \frac{R_1}{R_2\left(j\omega C + 1/R_0\right)} = \frac{1}{j\omega C_N}

where R0R_0 is very big and 1/R01/R_0 can be neglected. The negative capacity is

CN=−R2R1CC_N = -\frac{R_2}{R_1} C

2 Reference

[1] Hagood, N. W., & Von Flotow, A. (1991). Damping of structural vibrations with piezoelectric materials and passive electrical networks. Journal of sound and vibration, 146(2), 243-268.

[2] Beck, B. S., Cunefare, K. A., & Collet, M. (2013). The power output and efficiency of a negative capacitance shunt for vibration control of a flexural system. Smart Materials and Structures, 22(6), 065009.

[3] Trainiti, G., Xia, Y., Marconi, J., Cazzulani, G., Erturk, A., & Ruzzene, M. (2019). Time-periodic stiffness modulation in elastic metamaterials for selective wave filtering: Theory and experiment. Physical review letters, 122(12), 124301.